Metasurface Colloidal Quantum Dot Photodetectors

Fast, sensitive and spectrally tuneable colloidal-quantum-dot photodetectors.

Solution-processed semiconductors are compatible with a range of substrates, which enables their direct integration with organic circuits, microfluidics, optical circuitry and commercial microelectronics. Ultrasensitive photodetectors based on solution-process colloidal quantum dots operating in both the visible and infrared have been demonstrated, but these devices have poor response times (on...

PbS Colloidal Quantum Dot Photodetectors operating in the near infrared

Colloidal quantum dots have recently attracted lot of interest in the fabrication of optoelectronic devices due to their unique optical properties and their simple and low cost fabrication. PbS nanocrystals emerged as the most advanced colloidal material for near infrared photodetectors. In this work we report on the fabrication and characterization of PbS colloidal quantum dot photoconductors....

Modeling of High Temperature GaN Quantum Dot Infrared Photodetectors

In this paper, we present calculations for different parameters of quantum dot infrared photodetectors. We considered a structure which includes quantum dots with large conduction-band-offset materials (GaN/AlGaN). Single band effective mass approximation has been applied in order to calculate the electronic structure. Throughout the modeling, we tried to consider the limiting factors which dec...

Quantum-dot infrared photodetectors: a review

Quantum-dot infrared photodetectors (QDIPs) are positioned to become an important technology in the field of infrared (IR) detection, particularly for high-temperature, low-cost, high-yield detector arrays required for military applications. High-operating temperature (≥150 K) photodetectors reduce the cost of IR imaging systems by enabling cryogenic dewars and Stirling cooling systems to be re...

Plasmonic light trapping leads to responsivity increase in colloidal quantum dot photodetectors